Approaching compositional limits of perovskite – type oxides and oxynitrides by synthesis of Mg0.25Ca0.65Y0.1Ti(O,N)3, Ca1–xYxZr(O,N)3 (0.1 ≤ x ≤ 0.4), and Sr1–xLaxZr(O,N)3 (0.1 ≤ x ≤ 0.4)

Partial substitution of cations and anions in perovskite-type materials is a powerful way to tune the desired properties. The systematic variation of the cations size, the partial exchange of O²⁻ for N³⁻ and their effect on the size of the optical band gap and the thermal stability was investigated here. The anionic substitution resulted in the formation of the orthorhombic perovskite-type oxynitrides Mg_0.25Ca_0.65Y_0.1Ti(O,N)₃, Ca_1-xY_xZr(O,N)₃, and Sr_1–xLa_xZr(O,N)₃. A two-step synthesis protocol was applied: i) (nano-crystalline) oxide precursors were synthesized by a Pechini method followed by ii) ammonolysis in flowing NH₃ at T = 773 K (Ti) and T = 1273 K (Zr), respectively. High-temperature synthesis of such oxide precursors by solid–state reaction generally resulted in phase separation of the different A-site cations. Changes of the crystal structures were investigated by Rietveld refinements of the powder XRD data, thermal stability by DSC/TG measurements in oxygen atmosphere, oxygen and nitrogen contents by O/N analysis using hot gas extraction technique, and optical band gaps by photoluminescence spectroscopy. By moving from Mg_0.25Ca_0.65Y_0.1Ti(O,N)₃ via Ca_1–xY_xZr(O,N)₃ to Sr_1–xLa_xZr(O,N)₃, the degree of tilting of the octahedral network is reduced, as observed by an increase in the B–X–B angles caused by the simultaneously increasing effective ionic radius of the A-site cation(s). In general, increasing substitution levels on the A-site (Y³⁺ and La³⁺) are accompanied by an enhanced replacement of O²⁻ by N³⁻. In all three systems, this anionic substitution resulted in a reduction of the optical band gap by approximately 1 eV (Ti) and up to 2.1 eV (Zr) compared to the respective oxides. For Mg_0.25Ca_0.65Y_0.1Ti(O,N)₃ an optical band gap of 2.2 eV was observed, appropriate for a solar water splitting photocatalyst. The Zr-based oxynitrides required a by a factor of 2 higher nitrogen contents to significantly reduce the optical band gap and the measured values of 2.9 eV–3.2 eV are larger compared to the Ti-based oxynitride. Bulk thermal stability was revealed up to T = 881 K. In general, the thermal stability decreased with increasing substitution levels due to an increasing deviation from the ideal anionic composition as demonstrated by O/N analysis.     

Interplay of local resonances and Bragg band gaps in acoustic waveguides with periodic detuned resonators

This letter is concerned with acoustic wave propagation and transmission in acoustic waveguides with periodically grafted detuned Helmholtz resonators. The interplay of local resonances and Bragg band gaps in such periodic systems is examined. It is shown that, when the resonant frequencies of the resonators are tuned close to a Bragg band gap, the behavior of the Bragg band gap can be affected dramatically. Particularly, by introducing appropriately tuned resonators, the bandwidth of a Bragg band gap can be reduced to zero, leading to a very narrow pass band with great wave attenuation performance near both band edges. The band formation mechanisms of such periodic waveguides are further examined, providing explicit formulae to locate the band edge frequencies of all the band gaps, as well as the conditions to achieve very narrow pass bands in such periodic waveguides.     

K6In2Q6 (Q = S,Se, Te): Missing Links in the Series of Alkali Chalcogenido Ditrielates(III)

The chalcogenido indates K₆In₂Q₆ (Q = S, Se, Te) were synthesized from melts of the pure elements at a maximum temperature of 700 °C. All three potassium salts contain dinuclear units [In₂Q₆]^6– of two edge-sharing [InQ₄] tetrahedra. The sulfido and the selenido indate are isotypic and crystallize in the K₆Mn₂O₆-type structure [monoclinic, space group P2₁/c, a = 784.32(9)/809.32(3), b = 1274.58(14)/1322.37(4), c = 836.48(9)/870.53(3) pm, β = 97.900(2)/97.5877(8)°, Z = 2, R₁ = 0.0123/0.0109; for Q = S/Se]. The tellurido indate K₆In₂Te₆ crystallizes in a new orthorhombic structure type [space group Pnma, a = 1793.70(12), b = 1491.55(11), c = 837.40(6) pm, Z = 4, R₁ = 0.0157]. In this structure, the telluride anions form a hexagonal close packing, in which K⁺ cations occupy all octahedral voids; the In³⁺ ions take 1/6 (but always adjacent) tetrahedral voids. This structure-chemical relation to the h.c.p. packing, which is similarly found for most of the sodium dimetallates (e.g. Na₆Fe₂S₆), is substantiated by a full crystallographic group-subgroup tree. The crystal chemistry of the new indates is discussed and compared with that of alkali chalcogenido metallates(III) of Fe, Al and Ga containing [M₂Q₆]^6– dimers, which overall form as many as ten different structure types. DFT band structure calculations of the three title compounds exhibit bandgaps, which continuously decrease from the S to the Te compound and which are also in accordance with the pale yellow (S), bright yellow (Se) and red-brown (Te) color of the compounds. The chemical bonding in the salts and within the metallate anion is discussed on the basis of the partial DOS and a Bader analysis of the calculated electron density.     

Low Bandgap 2D Perovskite Single Crystal with Anomalous-large Charges/ions Collection Ratio for Ultra-sensitive and Stable X-ray Detectors

The low-dimensional halide perovskites have attracted increasing attention due to their improved moisture stability, reduced defects, and suppressed ions migration in many optoelectronic devices such as solar cells, light-emitting diodes, X-ray detectors, and so on. However, they are still limited by their large band gap and short charge carriers’ diffusion length. Here, we demonstrate that the introduction of metal ions into organic interlayers of two-dimensional (2D) perovskite by cross-linking the copper paddle-wheel cluster-based lead bromide ([Cu(O₂C−(CH₂)₃−NH₃)₂]PbBr₄) perovskite single crystals with coordination bonds can not only significantly reduce the perovskite band gap to 0.96 eV to boost the X-ray induced charge carriers, but can also selectively improve the charge carriers’ transport along the out-of-plane direction and blocking the ions motion paths. The [Cu(O₂C−(CH₂)₃−NH₃)₂]PbBr₄ single-crystal device can reach a record charges/ions collection ratio of 1.69×10¹⁸±4.7 % μGy_air⁻¹ s, and exhibit a large sensitivity of 1.14×10⁵±7% μC Gy_air⁻¹ cm⁻² with the lowest detectable dose rate of 56 nGy_air s⁻¹ under 120 keV X-rays irradiation. In addition, [Cu(O₂C−(CH₂)₃−NH₃)₂]PbBr₄ single-crystal detector exposed to the air without any encapsulation shows excellent X-ray imaging capability with long-term operational stability without any attenuation of 120 days.     

Ultra-Small-Bandgap Conjugated Polymers Based on an N−B←N Unit

Since the breakthrough of conductive polymers in 1977, scientists have made great efforts to create small band gap (E_g) conjugated polymers. Two general strategies to design small E_g conjugated polymers are quinoid structure and donor-acceptor structure. Ultrasmall E_g conjugated polymers (E_g<1.0 eV) always suffer from poor air stability because of high-lying HOMO energy levels. In this work, we report a new strategy to design ultrasmall E_g conjugated polymers by N−B←N unit, i.e. balanced resonant boron-nitrogen covalent bond (B−N) and boron-nitrogen coordination bond (B←N). The resulting polymer exhibits an E_g of 0.82 eV and an onset absorption wavelength of >1500 nm. Moreover, the polymer exhibits excellent air stability because of its low-lying LUMO/HOMO energy levels. An unprecedented property of this polymer is the selective light absorption in the infrared range (800–1500 nm) and high transparency in the visible range (400–780 nm). Using this property, for the first time, we demonstrate the application of conjugated polymers as transparent thermal-shielding coating layer on glass, which reduces indoor solar irradiation through window and consequently reduces power consumption for cooling of buildings and cars in summer.     

复合卤氧化铋纳米材料的合成及其光催化性能

采用低温沉淀法合成了一系列Bi OMxN1-x(M,N=Cl、Br、I)(0X1)复合材料,通过XRD、FESEM、TEM、EDS、UV-vis和PL等一系列表征和对有机物罗丹明光催化降解性能的研究表明:通过对复合材料合成过程中卤素离子含量的控制,使得此类固溶体具有独特的微观形貌和可控能带隙,使其在可见光下具有独特的光催化性能。在相同的光照条件下,Bi OCl0.5Br0.5、Bi OCl0.75I0.25和Bi OBr0.75I0.25相对于其他同系列的Bi OMxN1-x(M,N=Cl、Br、I)(0X1)微球样品而言,具有最好的光催化性能。     

Structures and electronic states of halogen-terminated graphene nano-flakes

Halogen-functionalized graphenes are utilized as electronic devices and energy materials. In the present paper, the effects of halogen-termination of graphene edge on the structures and electronic states of graphene flakes have been investigated by means of density functional theory (DFT) method. It was found that the ionization potential (Ip) and electron affinity of graphene (EA) are blue-shifted by the halogen termination, while the excitation energy is red-shifted. The drastic change showed a possibility as electronic devices such as field-effect transistors. The change of electronic states caused by the halogen termination of graphene edge was discussed on the basis of the theoretical results.     

基于光子晶体带边效应的表面增强拉曼基底

将光子晶体的带边效应与金纳米粒子的拉曼散射增强作用相结合,制备了一种新型光子晶体表面增强拉曼散射基底(PC-AuNPs),利用罗丹明B(RhB)作为报告分子,对所得基底性能进行检测.PC-AuNPs基底的制备包括3个步骤:在SiO2微球表面修饰氨基,再通过垂直沉降自组装得到蛋白石结构光子晶体(PC), 最后, 在光子晶体表面负载金纳米粒子(AuNPs).结果表明,光子晶体的带隙范围及AuNPs的负载量直接影响了PC-AuNPs基底的检测效果;以所得的PC-AuNPs基底测定RhB分子,其拉曼散射特征峰强度与浓度对数值呈现良好的线性关系,线性方程为I=1711lg[RhB(mol/L)]+15244,线性相关系数R2=0.9994,检出限为1×10-8 mol/L,表明此PC-AuNPs基底可用于目标物的定性及定量检测.本方法提高了传统拉曼散射光谱检测灵敏度,操作简单,具有良好的重现性,可为其它新型检测基底的制备提供.     

g-C3N4/SnS2 Heterostructure: a Promising Water Splitting Photocatalyst

Graphite-like carbon nitride (g-C₃N₄) based heterostrutures has attracted intensive attention due to their prominent photocatalytic performance. Here, we explore the g-C₃N₄/SnS₂ coupling effect on the electronic structures and optical absorption of the proposed g-C₃N₄/SnS₂ heterostructure through performing extensive hybrid functional calculations. The obtained geometric structure, band structures, band edge positions and optical absorptions clearly reveal that the g-C₃N₄ monolayer weakly couples to SnS₂ sheet, and forms a typical van der Waals heterojunction. The g-C₃N₄/SnS₂ heterostructure can effectively harvest visible light, and its valence band maximum and conduction band minimum locate in energetically favorable positions for both water oxidation and reduction reactions. Remarkably, the charge transfer from the g-C₃N₄ monolayer to SnS₂ sheet leads to the built-in interface polarized electric field, which is desirable for the photogenerated carrier separation. The built-in interface polarized electric field as well as the nice band edge alignment implys that the g-C₃N₄/SnS₂ heterostructure is a promising g-C₃N₄ based water splitting photocatalyst with good performance.     

The first representative of a new class of charge transfer complexes in o-quinone series for organic semiconductors

The first representative of a new class of charge transfer complexes for organic semiconductors was synthesized. The reaction of p-nitroaniline (PNA) with [1,10]-phenanthroline-5,6-dione (PD) results in the formation of a stable molecular charge transfer (CT) complex PNA₃-PD₂ in a ratio of 3:2. The structure of the molecular CT complex PNA₃-PD₂ was established by X-ray diffraction studies. Using the density functional theory method, it is shown that several types of intermolecular interactions are realized in the complex: between the PNA amino group and the nitro group of another PNA molecule, carbonyl groups, and PD nitrogen atoms. Complex PNA₃-PD₂ is stable only in solid form. The diffuse reflectance UV–vis spectrum of PNA₃-PD₂ crystal powder is characterized by the intense weakly structured long-wavelength absorption band up to 650 nm. Quantum chemical calculations of the electronic structure have shown that the complex PNA₃-PD₂ is a straight-band semiconductor with a band gap of 2.11 eV.